WebThe radiation hardened ISL74422BRH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a 5V CMOS logic input signal into a high current output at voltages up to 18V. Its fast rise/fall times and high current output allow very quick control of even the largest power MOSFETs in high-frequency applications. The input of the ... WebUCC27423-4-5-Q1EVM — UCC2742xQ1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable Evaluation Module (EVM) The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a …
High-side FET Drivers Renesas
WebHigh-speed FET Driver Recommended Operating Conditions Table 2 lists the recommended operating conditions for the PE29101. Devices should not be operated outside the recommended operating conditions listed below. Table 2 • Recommended Operating Conditions for PE29101 Parameter Min Typ Max Unit Supply for driver front-end, VDD 4.0 … WebJun 25, 2013 · IXYS, a Littelfuse Technology offers their IX4426, IX4427, and IX4428 dual low-side ultra-fast MOSFET drivers. IXYS, a Littelfuse Technology features their IX4426, IX4427, and IX4428 dual high-speed, low-side gate drivers. Each of the two outputs can source and sink 1.5 A of peak current with rise and fall times of less than 10 ns. diablo resurrected 2
Document Category: Product Specification UltraCMOS® High …
WebThe PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. WebThe TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (t r and t f = 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are 2/3 and 1/3 of V CC. The design inherently minimizes shoot-through current. 1 WebA switching MOSFET can cause a back-current from the gate back to the driving cicruit. MOSFET drivers are designed to handle this back current. (Ref: Laszlo Balogh Design And Application Guide For High Speed MOSFET Gate Drive Circuits.) Finally, many MOSFET drivers are designed explicitly for the purpose of controlling a motor with an H-bridge. cinepolis at posner park